PhD defense Emmanuel Bourgon: Semiconductor laser in a photonic crystal cavity: a study of mode-locking regimes
Thursday 25 June, 2026, at 10.00 (Paris time) at III-V Lab
Auditorium, III-V Lab, 1 Av. Augustin Fresnel, F-91120 Palaiseau and in videoconferencing
Original title: Laser à semiconducteurs dans une cavité à cristal photonique par intégration hybride : étude des régimes de verrouillage de mode
Jury
- Henri Benisty, LCF (Reviewer)
- Olivier Gauthier-Lafaye, LAAS (Reviewer)
- Sophie Bouchoule, C2N (Examiner)
- Christophe Peucheret, FOTON (Examiner)
- Frédéric Grillot, Télécom Paris (Supervisor)
- Alexandre Shen, III-V Lab (Co-Supervisor)
- Alfredo de Rossi, Thales Research and Technology (Guest)
Abstract
This thesis investigates a new III-V on silicon hybrid mode-locked laser architecture based on a photonic crystal (PhC) cavity without a saturable absorber.
Mode-locked lasers are central to numerous applications: telecommunications (high-speed WDM transmitters), radio frequencies (stable RF oscillators), etc.
Learn more
While such sources have long been integrated on the monolithic InP platform, their integration on the III-V-on-silicon platform is more recent and not well-established.
In this thesis, we investigate a laser architecture compact leveraging the III-V/Si vertical integration and the properties of the PhC resonator, decoupling the FSR from the cavity size.
First, we study the unique modal properties of these cavities. Next, we investigate a first generation of these components both experimentally and theoretically.
Mode locking is demonstrated and confirmed by simulations. Next, we consider their use in radio frequency and telecommunications applications.
Finally, in the last section, we focus on the integration with quantum dot materials.